03 خرداد 1403
نادر قبادي

نادر قبادی

مرتبه علمی: دانشیار
نشانی:
تحصیلات: دکترای تخصصی / فیزیک-حالت جامد
تلفن:
دانشکده: دانشکده علوم پایه

مشخصات پژوهش

عنوان
Band-pass magnetic tunnel junctions with β-Ga2O3 semiconductors for spin-filtering goals
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
Spin-filtering Tunnel-magneto resistance Band-pass transmission Magnetic tunnel junctions
سال
2022
مجله Micro and Nanostructures
پژوهشگران نادر قبادی

چکیده

Spin-filtering properties are investigated in magnetic tunnel junctions (MTJs) utilizing anti-reflective (AR) regions idea. The semiconductors are embedded as quantum wells in the A-RMTJs. The results show a full spin-filtering feature and an ultrahigh tunnel-magnetoresistance (TMR) ratio contrasted to those in the single-barrier MTJs as a result of the band-pass transmission in the A-RMTJs. Therefore, it can be designed an excellent spin-filter device as well as improved MRAMs in the field of spintronics.