In this work, we investigated the effects of the magnetic field on the electronic properties, thermal conductivity and heat capacity of biased bilayer boron phosphide (2L-BP) with B = B and B = P stacking types, using the tight-binding model. The magnetic field splits the density of states (DOS) peaks and significantly changes the DOS peak positions. Both bias voltage and magnetic field decrease the band gap in a linear pattern until it reaches zero and semiconductor-metallic transition occurs. The thermal properties of 2L-BP reduce to zero in the low-temperature range TZ due to the nonzero band gap, and above the TZ region, the thermal properties increase with increasing the temperature. In the presence of the stronger external fields, the thermal properties have higher intensity with more sensitivity to the magnetic field. The thermal properties of 2L-BP with B = B stacking type are larger than that of B = P stacking type, and both cases are more sensitive to the magnetic field than the bias voltage.
