S-Graphene, a new allotrope of graphene with two Dirac cones and zero bandgap, exhibits unique and interesting electronic properties due to the robustness of its Dirac cones. This study uses the full tight-binding model to explore the electronic and thermal properties of S-graphene under the influence of external magnetic fields and doping. Linear response theory and Green's function approach based on Kubo formula are employed to investigate the temperature-dependent behavior of electrical and thermal conductivity and Lorenz number. The results indicated that, based on robustness effects, the S-graphene shows different and diverse thermoelectric properties that increase its efficiency significantly. External magnetic fields split the valence and conduction sub-bands of S-graphene and increase its band edges through the Zeeman effect. Increasing the temperature excites charge carriers to the conduction bands, leading to an increase in thermal properties S-graphene with different types. The finding results indicated that in addition to robustness effects, the thermoelectric properties of S-graphene are strongly influenced with the external magnetic field and chemical potential parameters. These parameters increase the thermoelectric properties of S-graphene due to band structure modifications and increasing the density of charge carriers. The findings demonstrate the potential of S-graphene for use in electronic and magnetic devices, opening up new possibilities for further research and development in this field.
