2024 : 11 : 14
Raad Chegel

Raad Chegel

Academic rank: Associate Professor
ORCID:
Education: PhD.
ScopusId:
HIndex: 0/00
Faculty: science
Address: Malayer University
Phone: 09188899031

Research

Title
Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes
Type
JournalPaper
Keywords
Density functional theoryDWSiCNTElectronic structureDefect
Year
2010
Journal PHYSICS LETTERS A
DOI
Researchers Raad Chegel

Abstract

The effects of boron doping on the structural and electronic properties of double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.