03 خرداد 1403
ولي دلوجي

ولی دلوجی

مرتبه علمی: دانشیار
نشانی:
تحصیلات: دکترای تخصصی / فیزیک حالت جامد
تلفن: 0813339841
دانشکده: دانشکده علوم پایه

مشخصات پژوهش

عنوان
Effect of annealing temperature on photoluminescence spectra, gap states using different models and optical dispersion parameters in copper-doped ZnO films
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
Nanoparticles size, optical band gap, copper-doped ZnO films; annealing temperature, RF magnetron co-sputtering
سال
2020
مجله MOLECULAR SIMULATION
پژوهشگران ولی دلوجی

چکیده

ABSTRACT In this paper, a Zn - Cu mosaic target was used for fabricating of copper doped ZnO films using RF magnetron co-sputtering with oxygen and argon gases in room temperature. After the deposition of copper doped ZnO films, then films were annealed at different temperatures of 400, 500 and 600°C in an electrical furnace in the presence of argon gas. The positions of obtained peaks for the photoluminescence spectra were estimated to be 379, 424, 481 and 531 nm which they corresponding to ultraviolet and visible regions. Transmittance T(λ) and reflectance R(λ) spectra of copper doped ZnO films were used to estimate of gap states with different methods. The copper doped ZnO films annealed at 400°C were more disordered. The copper doped ZnO films annealed at 600°C have minimum values of oscillator strength S0 in about of 17.33 μm−2 . The copper doped ZnO films annealed at 500°C have maximum values of dispersion energy Ed and the oscillator strength f in about of 2.51 eV and 48.63 eV2 , respectively.