ABSTRACT In this paper, a Zn - Cu mosaic target was used for fabricating of copper doped ZnO films using RF magnetron co-sputtering with oxygen and argon gases in room temperature. After the deposition of copper doped ZnO films, then films were annealed at different temperatures of 400, 500 and 600°C in an electrical furnace in the presence of argon gas. The positions of obtained peaks for the photoluminescence spectra were estimated to be 379, 424, 481 and 531 nm which they corresponding to ultraviolet and visible regions. Transmittance T(λ) and reflectance R(λ) spectra of copper doped ZnO films were used to estimate of gap states with different methods. The copper doped ZnO films annealed at 400°C were more disordered. The copper doped ZnO films annealed at 600°C have minimum values of oscillator strength S0 in about of 17.33 μm−2 . The copper doped ZnO films annealed at 500°C have maximum values of dispersion energy Ed and the oscillator strength f in about of 2.51 eV and 48.63 eV2 , respectively.
