The using RF-magnetron sputtering, the ZnO thin films were deposited on glass substrates at room temperature. Then using an electrical furnace in the presence of argon gas, they were annealed at different temperatures (400–600 ◦C). It was found that with taking Nc = 4, Za = 2, Ne = 8 for ZnO films for covalently bonded crystalline and amorphous chalcogenides, the constant β has values of about 0.37 ± 0.04 and for halides and most oxides that have ionic structure the constant β has values of about 0.26 ± 0.04 eV. It can be seen that with increasing annealing temperature absorption edge these films have a shifting behavior towards larger wavelength. Due to shifting behavior of defects distribution of atoms into films, the values of the cut-off energy, E cut-off and the λ cut-off of these films were about 3.48 eV and 355 nm, respectively. The ZnO films annealed at 500 ◦C specially above 3 eV have maximum value of optical density. The different linears fitting of ln (⍺) for films were obtained as y = Ex + F where 10<E < 12.5 and 14<F < 16. The ZnO films annealed at 600 ◦C have minimum value of electron phonon interaction (Ee-p) in a bout of 0.858 eV. The optical band gap and disordering energy plots of these films can be fitted by linear relationship EU and Eg = 0.0989–0.148 EU. We found that as deposited ZnO films have minimum value of steepness parameter σ in about of 30.93 × 10 − 2 eV.
