The recent study on spin-transfer torque (STT) in resonant-tunneling magnetic tunnel junctions (RT-MTJs) utilizing an ultra-wide-bandgap semiconductor (SC) β-Ga2O3 presents significant advancements in spintronic technology. This research employs a tight-binding model (TBM) to analyze electronic transmission demonstrating that β-Ga2O3 substantially enhances STT performance compared to traditional materials like ZnO SC and nonmagnetic metals (NMs).
