Two-dimensional materials with controllable electronic properties have a significant effect on improving the performance of nanoelectronic devices. In this study, the electronic and thermal conductivity of the trilayer BP (3L-BP) and BN (3L-BN) in the presence of the bias voltage and magnetic field are investigated by tight binding model and Kubo-Greenwood formula. The different stacking types for all structures are selected. All selected configurations exhibit semiconductor properties and their electronic properties can be affected under the influence of an external electric field. Their band gap decrease to zero in critical field strength and the magnetic field shows a higher decreasing rate, compared to the bias voltage. The external fields increase the thermal conductivity of all cases and 3L-BP has higher thermal intensity than that 3L-BN. The results show that by applying stronger bias voltage or magnetic field, the thermal conductivity of 3L-BN structures can be enhanced in order to 3L-BP, independent of its wide band gap.
