27 مهر 1398
رعد چگل

رعد چگل

مرتبه علمی: دانشیار
نشانی: دانشگاه ملایر
تحصیلات: دکترای تخصصی / نانو اپتیک
تلفن: 09166615727
دانشکده: علوم پایه

مشخصات پژوهش

عنوان
Electronic Properties of SiNTs Under External Electric and Magnetic Fields Using the Tight-Binding Method
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
Nanostructures semiconductors electrical properties electronic structure
سال
2014
مجله JOURNAL OF ELECTRONIC MATERIALS
پژوهشگران رعد چگل

چکیده

We investigated the electronic properties of silicon nanotubes (SiNTs) under external transverse electric fields and axial magnetic fields using the tight-binding approximation. It was found that, after switching on the electric and magnetic fields, band modifications such as distortion of degeneracy, change in energy dispersion and subband spacing, and bandgap size reduction occur. The bandgap of silicon gear-like nanotubes (Si g-NTs) decreases linearly with increasing electric field strength, but the bandgap for silicon hexagonal nanotubes (Si h-NTs) first increases and then decreases (metallic) or first remains constant and then decreases (semiconducting). Our results show that the bandgap of Si h-NTs is very sensitive to both electric and magnetic fields, unlike Si g-NTs, which are more sensitive to electric than magnetic fields.