27 مهر 1398
رعد چگل

رعد چگل

مرتبه علمی: دانشیار
نشانی: دانشگاه ملایر
تحصیلات: دکترای تخصصی / نانو اپتیک
تلفن: 09166615727
دانشکده: علوم پایه

مشخصات پژوهش

عنوان
Effects of carbon doping on the electronic properties of boron nitride nanotubes: Tight binding calculation
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
Boron nitride nanotubes; Tight binding; Electronic structure; Doping
سال
2016
مجله PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
پژوهشگران رعد چگل

چکیده

The electronic properties of pure and carbon doped zigzag and armchair Boron Nitride Nanotubes (BNNTs) have been investigated based on tight binding formalism. It was found that the band gap is reduced due to substitution of Boron or Nitrogen atoms by carbon atoms and the doping effects of B- and N-substituted BNNTs are different. The applied electric field converts the carbon doped BNNTs from semiconductor to metal. The gap energy reduction shows an identical dependence to electric field and doping for both armchair and zigzag carbon doped BNNTs. Our results indicate that the band gap of carbon doped BNNTs is a function of the Impurity concentration, electric field strength and the direction between the electric field and dopant location. The band gap for C-doped BNNTs with four carbon atoms decreases linearly but for two carbon atoms, it is constant at first then decreases linearly.