27 مهر 1398
رعد چگل

رعد چگل

مرتبه علمی: دانشیار
نشانی: دانشگاه ملایر
تحصیلات: دکترای تخصصی / نانو اپتیک
تلفن: 09166615727
دانشکده: علوم پایه

مشخصات پژوهش

عنوان
Electrical and optical conductivities of bilayer silicene: Tight-binding calculations Read More: http://www.worldscientific.com/doi/abs/10.1142/S0217979217501582
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
Bilayers silicene; tight binding; electrical conductivity; optical conductivity; doping
سال
2017
مجله INTERNATIONAL JOURNAL OF MODERN PHYSICS B
پژوهشگران رعد چگل

چکیده

The electronic structures, densities of state and electrical and optical conductivities of monolayer and bilayer silicene sheets are investigated using tight-binding approximation and Green’s function method. We found that applying the electric field on doped bilayer silicene leads to band structure modification. For AA-stacked bilayer silicene, applying and increasing the bias FF does not create the energy gap but for AB-stacked bilayer, a small bias FF is enough to create an energy gap. It is shown that the electrical conductivity depends on temperature, doping and electric field. In pristine and doped AA- and AB-stacked bilayers, electrical conductivity increases (decreases) linearly with TT at low (high) temperature and decreases by increasing the doping onsite energy ΛΛ at all TT ranges. The effects of temperature on the conductivity increase with the increase of electric field. It is found that the electrical conductivity depends on the amount of interlayer hopping integral γγ. For the case of AA-stacking, there are three steps in optical conductivity at energies ω0=2μω0=2μ and |2μ±γ||2μ±γ| for μ=0μ=0 and μ≠0μ≠0. For the case of AB-stacking the optical conductivity has a step at 2μ2μ similar to monolayer sheet and some steps at energies |γ±2μ||γ±2μ|.