03 خرداد 1403
رعد چگل

رعد چگل

مرتبه علمی: دانشیار
نشانی: دانشگاه ملایر
تحصیلات: دکترای تخصصی / نانو اپتیک
تلفن: 09166615727
دانشکده: دانشکده علوم پایه

مشخصات پژوهش

عنوان
Significant modification of the electronic structure of biased trilayer SiC and BN via magnetic field to achieve enhanced thermoelectric performance
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
Tight bindng model Trilayer SiC Electronic structure Thermal properties External fields
سال
2023
مجله Materials Science and Engineering B-Advanced Functional Solid-State Materials
پژوهشگران رعد چگل

چکیده

The two-dimensional semiconducting materials with tunable electronic structure and high thermoelectric properties have a wide range of applications, especially in nanoscale devices. This study uses the Kubo-Greenwood formula in the framework of the Green function approach and the tight binding model to calculate the thermoelectric properties of trilayer SiC (3L-SiC). 3L-SiC is a semiconductor that can transform to metallic state with increasing applying the external fields with critical strength. The thermoelectric properties of the 3L-SiC and 3L-BN were analyzed under bias voltage, magnetic field and temperature up to 1500 K and compared with each other. The results show that thermal properties of the 3L-SiC are higher than that 3L-BN and both structures exhibit strong dependence on bias voltage and magnetic field with higher sensitivity to the magnetic field. The thermal properties of the selected structures increases with temperature and the external fields enhance the increasing rate. The behavior of the Lorenz Number in terms of temperature exhibits general pattern as increasing from zero to maximum value at TM and decreasing by further temperature increasing.