03 خرداد 1403
رعد چگل

رعد چگل

مرتبه علمی: دانشیار
نشانی: دانشگاه ملایر
تحصیلات: دکترای تخصصی / نانو اپتیک
تلفن: 09166615727
دانشکده: دانشکده علوم پایه

مشخصات پژوهش

عنوان
External magnetic field effects on the thermoelectric and thermodynamic properties of doped monolayer S-graphene: A theoretical study
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
S-Graphene Robustness effect Chemical doping Thermoelectric properties Seebeck coefficients
سال
2023
مجله PHYSICA B-CONDENSED MATTER
پژوهشگران رعد چگل

چکیده

This study explores the electronic, thermoelectric, and thermal properties of S-Graphene, a unique graphene allotrope with two Dirac cones and zero band gap, in the presence of magnetic field and doping. A full tight-binding model and Green function approach are utilized to study the effects of robustness, magnetic field, and doping on the thermoelectric properties of S-Graphene, including the heat capacity C(T), magnetic susceptibility χ(T), thermoelectric figure of merit ZT(T), and Seedbeck coefficients S(T) and the results are compared with those for T-Graphene. To including the robustness effects, four S1–S4 structures with different hopping parameters are selected. The results demonstrate that the temperature dependent of thermal properties of S-Graphene are strongly affected by the external parameters such as external field, chemical potential and Robustness effects. The C(T) exhibits a Schottky anomaly whose position is dependent on the magnetic field and doping parameters. Pure cases demonstrate minimum values for C(T) and χ(T), while electron/hole doping leads to increase their intensity due to enhanced density concentration of charge carriers. Additionally, the behavior of ZT(T) and S(T) depends on the structure type of S-Graphene and displays intriguing features in different temperature regions. The magnetic field significantly affects the number, position and intensity of peaks in S(μ). These findings provide important insights into the electronic, thermoelectric, and thermal properties of S-Graphene and offer possibilities for future device applications.