1404/03/26
رعد چگل

رعد چگل

مرتبه علمی: دانشیار
ارکید:
تحصیلات: دکترای تخصصی
اسکاپوس:
دانشکده: دانشکده علوم پایه
نشانی: دانشگاه ملایر
تلفن: 09188899031

مشخصات پژوهش

عنوان
Heat capacity, electrical and thermal conductivity of silicene
نوع پژوهش
JournalPaper
کلیدواژه‌ها
Solid State and Materials
سال
2016
مجله The European Physical Journal B
شناسه DOI
پژوهشگران Raad Chegel

چکیده

We investigate the electronic heat capacity, electrical and thermal conductivity of monolayer planar and buckled silicon sheets (silicene) through tight binding approximation and Kubo-Greenwood formula. Applying and increasing dopant atoms to the system leads to opening a gap in the band structures and density of states that causes to decrease (increase) the heat capacity before (after) the Schottky anomaly. The electrical and electronic thermal conductivity of doped silicene reduces with increasing impurity strength.