03 خرداد 1403
رعد چگل

رعد چگل

مرتبه علمی: دانشیار
نشانی: دانشگاه ملایر
تحصیلات: دکترای تخصصی / نانو اپتیک
تلفن: 09166615727
دانشکده: دانشکده علوم پایه

مشخصات پژوهش

عنوان
Bias induced modulation of electrical and thermal conductivity and heat capacity of BN and BN/graphene bilayers
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
BN/graphene bilayers; Tight binding; Electronic structure; Electrical conductivity; Heat capacity; Thermal conductivity
سال
2017
مجله PHYSICA B-CONDENSED MATTER
پژوهشگران رعد چگل

چکیده

By using the tight binding approximation and Green function method, the electronic structure, density of state, electrical conductivity, heat capacity of BN and BN/graphene bilayers are investigated. The AA-, AB1- and AB2- BN/graphene bilayers have small gap unlike to BN bilayers which are wide band gap semiconductors. Unlike to BN bilayer, the energy gap of graphene/BN bilayers increases with external field. The magnitude of the change in the band gap of BN bilayers is much higher than the graphene/BN bilayers. Near absolute zero, the σ(T) is zero for BN bilayers and it increases with temperature until reaches maximum value then decreases. The BN/graphene bilayers have larger electrical conductivity larger than BN bilayers. For both bilayers, the specific heat capacity has a Schottky anomaly.