رعد چگل

In this paper, using DFT calculation and the third nearest neighbor tight-binding model, the electronic properties of the buckled (N,0) armchair silicene nanoribbons (N-ASiNRs) with β-type [N = 9,12,15,…] and γ-types [N = 10,13,16,…] investigated. Also, using the Green’s function method, the nanoribbon width and temperature dependence of the heat capacity [Cv(T)], electrical conductivity [], electronic thermal conductivity, and Lorenz factor have been calculated for ASiNRs with β- and γ-types. The required tight binding parameters are obtained based on DFT calculations. Both β- and γ-ASiNRs are direct gap semiconductors and their band gap decreases with increasing the nanoribbon width. Our tight binding calculations show that the band gap of the β type is smaller than that of the γ type, which is in agreement with the DFT results. For both selected nanoribbon types, the thermal properties increases with temperature due to the band gap modifications and getting the thermal energy by charge carriers. We found that the thermal properties of β configuration are larger than that γ configuration and their differences increases with increasing the temperature.