مشخصات پژوهش

عنوان	Improved tunnel magnetoresistance by double-barrier magnetic tunnel junctions with a layered antiferromagnet material
نوع پژوهش	مقاله چاپ شده
کلیدواژه‌ها	Layered antiferromagnet Tunnel magnetoresistance Double-barrier magnetic tunnel junctions
چکیده	The angle-dependent tunnel magnetoresistance (TMR) is studied in double-barrier magnetic tunnel junctions with a central layered antiferromagnet (DB-MTJs-AF). The study utilizes a tight-binding model to compute the transmission function via the non-equilibrium Green’s function method, incorporating Rashba spin–orbit coupling within the layered AF. The results indicate that DB-MTJs-AF exhibit higher TMR compared to those with a central ferromagnet (DB-MTJs-F). This enhancement is attributed to the unique properties of antiferromagnetic materials leading to improved performance in spintronic devices.
پژوهشگران	نادر قبادی (نفر اول)، رضا دقیق (نفر دوم)، سید علی حسینی مرادی (نفر سوم)