عنوان	Ultra-Wide-Bandgap Semiconductor for Improving Resonant Spin-Transfer Torque
نوع پژوهش	مقاله چاپ شده
کلیدواژه‌ها	Spin-transfer torqueultra-wide-bandgap semiconductorresonant-tunneling magnetic tunnel junctions
چکیده	The recent study on spin-transfer torque (STT) in resonant-tunneling magnetic tunnel junctions (RT-MTJs) utilizing an ultra-wide-bandgap semiconductor (SC) β-Ga2O3 presents significant advancements in spintronic technology. This research employs a tight-binding model (TBM) to analyze electronic transmission demonstrating that β-Ga2O3 substantially enhances STT performance compared to traditional materials like ZnO SC and nonmagnetic metals (NMs).
پژوهشگران	نادر قبادی (نفر دوم)، رضا دقیق (نفر سوم)، هادی ذوالفقاری (نفر اول)