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چکیده
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In this work, we present a detailed theoretical study on the low bias current–voltage (I–V ) characteristic of biased planar graphene superlattice (PGSL), provided by a heterostructured substrate and a series of grounded metallic planes placed over a graphene sheet, which induce a periodically modulated Dirac gap and Fermi velocity barrier, respectively. We investigate the effect of PGSL parameters on the I–V characteristic and the appearance of multipeak negative differential resistance (NDR) in the proposed device within the Landauer–Buttiker formalism and adopted transfer matrix method. Moreover‚ we propose a novel venue to control the NDR in PGSL with Fermi velocity barrier. Different regimes of NDR have been recognized, based on the PGSL parameters and external bias. From this viewpoint‚ we obtain multipeak NDR through miniband aligning in PGSL. The maximum pick to valley ratio (PVR) up to 167 obtained for c, the Fermi velocity correlation (ratio of Fermi velocity in barrier and well region), is 1.9 at bias voltages between 70–130 mV. Our findings have good agreement with experiments and can be considered in designing multi-valued memory‚ functional circuit, low power and high-speed nanoelectronic device applications.
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