مشخصات پژوهش

عنوان	Pulsed laser deposition of Al doped ZnO films as TCO material - Influence of laser incident energy on structural, optical and photoconductivity properties
نوع پژوهش	مقاله چاپ شده
کلیدواژه‌ها	TCO material Al doped ZnO Photoconductor film Transparent film
چکیده	Thin photoconductor and transparent layers of zinc oxide doped with aluminum ions were deposited on glass substrates using pulsed laser deposition at different laser incident energies (1.05, 3.10, and 6.5 J􀂻cm2). A one-inch target composed of 2% Al metal incorporated in ZnO used for the deposition process was fabricated from pressed-sintered high purity powders by solid state reaction. The X-ray diffraction patterns exhibited the hexagonal wurtzite crystal structure with a preferred orientation in a direction of (0 0 2) of synthesized thin films. The crystallite size varied between 44 and 34 nm, as determined by the Williamson-Hall analysis. Energy dispersive analysis of x-ray confirmed the presence of elements in the deposited films. The optical properties measured using UV–visible exhibited high transmittance in the visible region. The optical band gap of the thin films increased from 3.29 to 3.40 eV. The photoluminescence spectra showed a broad visible luminescence at different wavelengths due to intrinsic or extrinsic defects and an obvious blue shift in the UV region with an increase in laser incident energy which is referred to as Burstein–Moss shift. According to these results, the Al-doped ZnO thin films can be used in the fabrication of TCO material.
پژوهشگران	محمود ناصری (نفر دوم)، احمد کمالیانفر (نفر اول)